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SQJB60EP-T1_GE3

¥9.43
FET、MOSFET 阵列

MOSFET 2 N-CH 60V POWERPAK SO8

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
Power - Max48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package/ CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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Vishay/ Siliconix FET、MOSFET 阵列 产品 SQJB60EP-T1_GE3

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