参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 500A (Tc) |
Rds On (Max) @ Id, Vgs | 2.13mOhm @ 500A, 15V |
Vgs(th) (Max) @ Id | 5.15V @ 224mA |
Gate Charge (Qg) (Max) @ Vgs | 1340nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 39700pF @ 800V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | AG-62MM |
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Infineon Technologies FET、MOSFET 阵列 产品 FF2MR12KM1HOSA1
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