| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 238A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 120A, 20V |
| Vgs(th) (Max) @ Id | 3.2V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 712nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 1000V |
| Power - Max | 1.114kW (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | Module |
| Supplier Device Package | - |
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