| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 149A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 15V |
| Vgs(th) (Max) @ Id | 4.3V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 546.4nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 7007pF @ 450V |
| Power - Max | 352W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | Module |
| Supplier Device Package | - |
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