| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | - |
| Configuration | 2 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Rds On (Max) @ Id, Vgs | 32.3mOhm @ 25A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | - |
| Supplier Device Package | - |
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Infineon Technologies FET、MOSFET 阵列 产品 DF16MR12W1M1HFB67BPSA1
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