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FF11MR12W2M1HPB11BPSA1

¥1062.58
FET、MOSFET 阵列

LOW POWER EASY

参数名称参数值
Product StatusActive
Technology-
Configuration-
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-
Mounting Type-
Package/ Case-
Supplier Device Package-

新闻资讯

Infineon Technologies FET、MOSFET 阵列 产品 FF11MR12W2M1HPB11BPSA1

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