| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 4.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1095pF @ 15V |
| Power - Max | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 532-BFBGA, FCBGA |
| Supplier Device Package | 532-FCBGA (23x23) |
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Infineon Technologies FET、MOSFET 阵列 产品 BSO211PH
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