| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 251A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 120A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 696nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9060pF @ 1000V |
| Power - Max | 1.042kW (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package/ Case | Module |
| Supplier Device Package | SP6-P |
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