参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 250A (Tc) |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 66mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 30000pF @ 10V |
Power - Max | 1800W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | Module |
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ROHM Semiconductor FET、MOSFET 阵列 产品 BSM250D17P2E004
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