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BSM250D17P2E004

¥8501.76
FET、MOSFET 阵列

HALF BRIDGE MODULE CONSISTING OF

参数名称参数值
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C250A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 66mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds30000pF @ 10V
Power - Max1800W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package/ CaseModule
Supplier Device PackageModule

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