| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel Complementary |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc), 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V, 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 415pF @ 20V, 520pF @ 20V |
| Power - Max | 2W (Tc), 2.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
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Goford Semiconductor FET、MOSFET 阵列 产品 G4616
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