| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 594pF @ 30V |
| Power - Max | 2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
新闻资讯
Goford Semiconductor FET、MOSFET 阵列 产品 G1K8P06S2
作为Goford Semiconductor优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购G1K8P06S2时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买G1K8P06S2绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解G1K8P06S2产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
G1K8P06S2供应商,G1K8P06S2现货,G1K8P06S2代理商,G1K8P06S2pdf参数资料,买G1K8P06S2,G1K8P06S2报价,G1K8P06S2库存
