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PJT7828_R1_00001

¥3.38
FET、MOSFET 阵列
PANJIT

30V N-CHANNEL ENHANCEMENT MODE M

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Rds On (Max) @ Id, Vgs1.2Ohm @ 300mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds45pF @ 10V
Power - Max350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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