| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 404mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.8V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 150V |
| Power - Max | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 4-SMD, No Lead |
| Supplier Device Package | 4-SMD |
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