| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA, 2V @ 800µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 4.5V, 21.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 13V, 3603pF @ 13V |
| Power - Max | 960mW (Ta), 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-PowerWDFN |
| Supplier Device Package | 8-PQFN (5x6) |
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