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SH8K10SGZETB

¥9.94
FET、MOSFET 阵列

SH8K10S IS A POWER MOSFET WITH L

参数名称参数值
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 8.5A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16.8nC @ 5V, 17.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 10V, 830pF @ 10V
Power - Max1.4W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

新闻资讯

ROHM Semiconductor FET、MOSFET 阵列 产品 SH8K10SGZETB

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