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SIZF300DT-T1-GE3

¥8.64
FET、MOSFET 阵列

MOSFET DUAL N-CHAN 30V PPAIR 3X3

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V, 3150pF @ 15V
Power - Max3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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Vishay/ Siliconix FET、MOSFET 阵列 产品 SIZF300DT-T1-GE3

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