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QH8K26TR

¥7.13
FET、MOSFET 阵列

QH8K26 IS LOW ON-RESISTANCE AND

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs38mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds275pF @ 20V
Power - Max1.1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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ROHM Semiconductor FET、MOSFET 阵列 产品 QH8K26TR

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