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NTMD6N02R2G

¥6.48
FET、MOSFET 阵列
onsemi

MOSFET 2N-CH 20V 3.92A 8SOIC

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.92A
Rds On (Max) @ Id, Vgs35mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 16V
Power - Max730mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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onsemi FET、MOSFET 阵列 产品 NTMD6N02R2G

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