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HS8K11TB

¥4.54
FET、MOSFET 阵列

MOSFET 2N-CH 30V 7A/11A HSML

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A, 11A
Rds On (Max) @ Id, Vgs17.9mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-UDFN Exposed Pad
Supplier Device PackageHSML3030L10

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ROHM Semiconductor FET、MOSFET 阵列 产品 HS8K11TB

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