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PMDPB55XP,115

¥3.60
FET、MOSFET 阵列
Nexperia

MOSFET 2P-CH 20V 3.4A 6HUSON

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs70mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds785pF @ 10V
Power - Max490mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case6-UFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

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Nexperia FET、MOSFET 阵列 产品 PMDPB55XP,115

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