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PMDT290UNEH

¥3.60
FET、MOSFET 阵列
Nexperia

PMDT290UNE/SOT666/SOT6

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)
Rds On (Max) @ Id, Vgs380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds83pF @ 10V
Power - Max330mW (Ta), 1.09W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseSOT-563, SOT-666
Supplier Device PackageSOT-666

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Nexperia FET、MOSFET 阵列 产品 PMDT290UNEH

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