| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel Complementary |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA, 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V, 15nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 486pF @ 10V, 642pF @ 10V |
| Power - Max | 700mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 6-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-6 (Type B) |
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