SSM6N36FE,LM
￥3.10
MOSFET 2N-CH 20V 0.5A ES6
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
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Toshiba Electronic Devices and Storage Corporation FET、MOSFET 阵列 产品 SSM6N36FE,LM
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