参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc) |
Rds On (Max) @ Id, Vgs | 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA, 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V, 87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1715pF @ 15V, 6430pF @ 15V |
Power - Max | 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-PowerWDFN |
Supplier Device Package | 8-PQFN (5x6) |
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