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PJL9812_R2_00201

¥4.54
FET、MOSFET 阵列
PANJIT

30V DUAL N-CHANNEL ENHANCEMENT M

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds421pF @ 15V
Power - Max2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

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