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EM6K1T2R

¥3.46
FET、MOSFET 阵列

MOSFET 2N-CH 30V .1A EMT6

参数名称参数值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100mA
Rds On (Max) @ Id, Vgs8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds13pF @ 5V
Power - Max150mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseSOT-563, SOT-666
Supplier Device PackageEMT6

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