参数名称 | 参数值 |
---|---|
Product Status | Not For New Designs |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V, 20V |
Current - Continuous Drain (Id) @ 25°C | 100mA, 200mA |
Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
Power - Max | 150mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
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