参数名称 | 参数值 |
---|---|
Product Status | Not For New Designs |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 100mA |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
Power - Max | 120mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 6-SMD, Flat Leads |
Supplier Device Package | VMT6 |
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