| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 45A |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860pF @ 15V |
| Power - Max | 2.8W |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-PowerLDFN |
| Supplier Device Package | 8-LSON (5x6) |
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Texas Instruments FET、MOSFET 阵列 产品 CSD87355Q5DT
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