| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA, 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V, 23.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V, 2425pF @ 15V |
| Power - Max | 20.2W, 40W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® |
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Vishay/ Siliconix FET、MOSFET 阵列 产品 SIZ988DT-T1-GE3
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