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CSD88539NDT

¥6.91
FET、MOSFET 阵列

MOSFET 2N-CH 60V 15A 8SOIC

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C15A
Rds On (Max) @ Id, Vgs28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds741pF @ 30V
Power - Max2.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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Texas Instruments FET、MOSFET 阵列 产品 CSD88539NDT

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