参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 11A, 31A |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 12V |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | 8-PowerTDFN |
Supplier Device Package | PG-TISON-8 |
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Infineon Technologies FET、MOSFET 阵列 产品 BSC0910NDIATMA1
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