| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package/ Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
新闻资讯
Infineon Technologies 单 FET、MOSFET 产品 IPD60R1K0CEATMA1
作为Infineon Technologies优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购IPD60R1K0CEATMA1时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买IPD60R1K0CEATMA1绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解IPD60R1K0CEATMA1产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
IPD60R1K0CEATMA1供应商,IPD60R1K0CEATMA1现货,IPD60R1K0CEATMA1代理商,IPD60R1K0CEATMA1pdf参数资料,买IPD60R1K0CEATMA1,IPD60R1K0CEATMA1报价,IPD60R1K0CEATMA1库存
