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FCPF11N65

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单 FET、MOSFET
onsemi

MOSFET N-CH 650V 11A TO220F

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1490 pF @ 25 V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package/ CaseTO-220-3 Full Pack

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onsemi 单 FET、MOSFET 产品 FCPF11N65

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