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IRFHM8228TRPBF

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单 FET、MOSFET

MOSFET N-CH 25V 19A 8PQFN

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1667 pF @ 10 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 34W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (3.3x3.3), Power33
Package/ Case8-PowerTDFN

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Infineon Technologies 单 FET、MOSFET 产品 IRFHM8228TRPBF

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