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2N6661JAN02

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单 FET、MOSFET

MOSFET N-CH 90V 860MA TO39

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)90 V
Current - Continuous Drain (Id) @ 25°C860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
FET Feature-
Power Dissipation (Max)725mW (Ta), 6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package/ CaseTO-205AD, TO-39-3 Metal Can

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Vishay/ Siliconix 单 FET、MOSFET 产品 2N6661JAN02

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