参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 90 V |
Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-39 |
Package/ Case | TO-205AD, TO-39-3 Metal Can |
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Vishay/ Siliconix 单 FET、MOSFET 产品 2N6661JAN02
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