| 参数名称 | 参数值 |
|---|---|
| Product Status | Last Time Buy |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 1.6A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | +10V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-MPAK |
| Package/ Case | TO-236-3, SC-59, SOT-23-3 |
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Renesas Electronics Corporation 单 FET、MOSFET 产品 RQJ0303PGDQA#H6
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