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TK20C60W,S1VQ

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单 FET、MOSFET

MOSFET N-CH 600V 20A I2PAK

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 300 V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package/ CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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