TK20C60W,S1VQ
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MOSFET N-CH 600V 20A I2PAK
参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 155mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package/ Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK20C60W,S1VQ
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