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TT8U2TCR

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单 FET、MOSFET

MOSFET P-CH 20V 2.4A 8TSST

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs105mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 4.5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.25W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSST
Package/ Case8-SMD, Flat Lead

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