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IPD50R380CEBTMA1

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单 FET、MOSFET

MOSFET N-CH 500V 14.1A TO252-3

参数名称参数值
Product StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs380mOhm @ 3.2A, 13V
Vgs(th) (Max) @ Id3.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs24.8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds584 pF @ 100 V
FET Feature-
Power Dissipation (Max)73W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Infineon Technologies 单 FET、MOSFET 产品 IPD50R380CEBTMA1

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