| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 190 V |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 3.8Ohm @ 360mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 100 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.9W (Ta), 7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Package/ Case | PowerPAK® SC-70-6 Dual |
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Vishay/ Siliconix 单 FET、MOSFET 产品 SIA850DJ-T1-GE3
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