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SI6413DQ-T1-GE3

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单 FET、MOSFET

MOSFET P-CH 20V 7.2A 8TSSOP

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs10mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.05W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package/ Case8-TSSOP (0.173", 4.40mm Width)

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Vishay/ Siliconix 单 FET、MOSFET 产品 SI6413DQ-T1-GE3

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