| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 830mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package/ Case | SOT-23-6 Thin, TSOT-23-6 |
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Vishay/ Siliconix 单 FET、MOSFET 产品 SI3812DV-T1-GE3
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