参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 44mOhm @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 634 pF @ 15 V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta), 1.7W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
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Vishay/ Siliconix 单 FET、MOSFET 产品 SI2334DS-T1-GE3
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