参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12 V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 12mOhm @ 9A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 6 V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MPT6 |
Package/ Case | 6-SMD, Flat Leads |
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ROHM Semiconductor 单 FET、MOSFET 产品 RP1A090ZPTR
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