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FDFMA2P859T

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单 FET、MOSFET
onsemi

MOSFET P-CH 20V 3A MICROFET

参数名称参数值
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds435 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicroFET 2x2 Thin
Package/ Case6-UDFN Exposed Pad

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onsemi 单 FET、MOSFET 产品 FDFMA2P859T

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