| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package/ Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies 单 FET、MOSFET 产品 IPI024N06N3GHKSA1
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