参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12 V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 19mOhm @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 2875 pF @ 6 V |
FET Feature | - |
Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN2020MD-6 |
Package/ Case | 6-UDFN Exposed Pad |
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