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FCU900N60Z

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单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR, 4

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 25 V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package/ CaseTO-251-3 Stub Leads, IPak

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Fairchild Semiconductor 单 FET、MOSFET 产品 FCU900N60Z

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