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FCPF650N80Z

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单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR, N

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1565 pF @ 100 V
FET Feature-
Power Dissipation (Max)30.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package/ CaseTO-220-3 Full Pack

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Fairchild Semiconductor 单 FET、MOSFET 产品 FCPF650N80Z

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